SOLEIL II - Venir à SOLEIL
- Annuaire & contacts
Dernière mise à jour : 05/10/2023
Link, S., Forti, S., Stöhr, A., Küster, K., Rösner, M., Hirschmeier, D., Chen, C., Avila, J., Asensio, M.C., Zakharov, A.A., Wehling, T.O., Lichtenstein, A.I., Katsnelson, M.I., Starke, U. "Introducing strong correlation effects into graphene by gadolinium intercalation" Physical Review B., 100(12): art.n° 121407. (2019).
Hall, J., Ehlen, N., Berges, J., van Loon, E., van Efferen, C., Murray, C., Rösner, M., Li, J., Senkovskiy, B.V., Hell, M., Rolf, M., Heider, T., Asensio, M.C., Avila, J., Plucinski, L., Wehling, T., Grüneis, A., Michely, T. "Environmental Control of Charge Density Wave Order in Monolayer 2H-TaS2" ACS Nano., 13(9): 10210-10220. (2019).
Randle, M., Lipatov, A., Kumar, A., Kwan, C.P., Nathawat, J., Barut, B., Yin, S., He, K., Arabchigavkani, N., Dixit, R., Komesu, T., Avila, J., Asensio, M.C., Dowben, P.A., Sinitskii, A., Singisetti, U., Bird, J.P. "Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors" ACS Nano., 13(1): 803–811. (2019).
Giménez-Marqués, M., Bellido, E., Berthelot, T., Simón-Yarza, T., Hidalgo, T., Simón-Vázquez, R., González-Fernández, A., Avila, J., Asensio, M.C., Gref, R., Couvreur, P., Serre, C., Horcajada, P. "GraftFast Surface Engineering to Improve MOF Nanoparticles Furtiveness" Small., 14(40): art.n° 1870182. (2018).
Chen, C., Avila, J., Arezki, H., Nguyen, V.L., Shen, J., Mucha-Kruczyński, M., Yao, F., Boutchich, M., Chen, Y., Lee, Y.H., Asensio, M.C. "Retraction Note: Large local lattice expansion in graphene adlayers grown on copper" Nature Materials., on line first (02/10/2018): (2018).
Tang, Y., Cao, X., Honarfar, A., Abdellah, M., Chen, C., Avila, J., Asensio, M.C., Hammarström, L., Sa, J., Canton, S.E., Zheng, K., Pullerits, T., Chi, Q. "Inorganic Ions Assisted Anisotropic Growth of CsPbCl3 Nanowires with Surface Passivation Effect" ACS Applied Materials & Interfaces., 10(35): 29574-29582. (2018).
Ben Aziza, Z., Zólyomi, V., Henck, H., Pierucci, D., Silly, M.G., Avila, J., Magorrian, S.J., Chaste, J., Chen, C., Yoon, M., Xiao, K., Sirotti, F., Asensio, M.C., Lhuillier, E., Eddrief, M., Fal'ko, V.A., Ouerghi, A. "Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe" Physical Review B., 98(11): art.n° 115405. (2018).
Senkovskiy, B.V., Usachov, D.Y., Fedorov, A.V., Marangoni, T., Haberer, D., Tresca, C., Profeta, G., Caciuc, V., Tsukamoto, S., Atodiresei, N., Ehlen, N., Chen, C., Avila, J., Asensio, M.C., Varykhalov, A.Y., Nefedov, A., Wöll, C., Kim, T.K., Hoesch, M., Fischer, F.R., Grüneis, A. "Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint" ACS Nano., 12(8): 7571–7582. (2018).
Zhang, H., Bao, C., Jiang, Z., Zhang, K., Li, H., Chen, C., Avila, J., Wu, Y., Duan, A., Asensio, M.C., Zhou, S. "Resolving deep quantum well states in atomically thin 2H-MoTe2 flakes by Nanospot Angle-Resolved Photoemission Spectroscopy" Nano Letters., 18(8): 4664–4668. (2018).
Chen, Y., Chen, C., Kealhofer, R., Liu, H., Yuan, Z., Jiang, L., Suh, J., Park, J., Ko, C., Choe, H.S., Avila, J., Zhong, M., Wei, Z., Li, J., Li, S., Gao, H., Liu, Y., Analytis, J., Xia, Q., Asensio, M.C., Wu, J. "Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy" Advanced Materials., 30(30): art.n° 1800754. (2018).